Day 1 (Wed, Dec. 7)
| 5:00-8:00 PM | Registration & Posters (Packard Lobby): with drinks and hors d'oeuvres |
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Day 2 (Thu, Dec. 8)
| 7:00-8:30 AM | Registration & Breakfast with Espresso Drinks (Allen 101X) |
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| 8:30-8:40 | Opening Remarks (Eric Pop and Ilya Karpov) |
| S1: Ferroelectric Memory 1 (Chair: Milan Pešić, AMAT) | |
| 8:40-9:05 | Sou-Chi Chang (Intel), "Next-generation High-speed Dense Embedded Memory: Hafnia-based (Anti-)ferroelectric Random-access Memory" |
| 9:05-9:30 | Chris Regan (UCLA), "STEM EBIC Observation of a Switching Ferroelectric Capacitor" |
| 9:30-9:55 | Eilam Yalon (Technion), "Switching Kinetics in Si:HfO2 Ferroelectric FETs Probed by Ultrafast Measurements" |
| 9:55-10:20 | BREAK |
| S2: New Memory Concepts (Chair: Subhali Subhechha, imec) | |
| 10:20-10:45 | Attilio Belmonte (imec), "Capacitorless BEOL-compatible IGZO-based DRAM cell with >1000s retention time and excellent scalability" |
| 10:45-11:10 | Wriddhi Chakraborty (Univ. Notre Dame), "1T Floating Body RAM (FBRAM) on 22nm FDSOI Platform for High Density Cache in Cryogenic Computing" |
| 11:10-11:35 | Koji Sakui (Unisantis), "Dynamic Flash Memory with Fast Block Refresh" |
| 11:35-1:15 PM | Lunch and Posters |
| S3: Chalcogenide Memory and Selectors (Chair: Eilam Yalon, Technion) | |
| 1:15-1:40 | Eric Pop (Stanford), "Thermal Confinement and Low-Power Memory Devices Based on Superlattice Chalcogenides" |
| 1:40-2:05 | Ali Gokirmak (University of Connecticut), "Stopping Resistance Drift in Phase Change Memory Cells and Modeling of Charge Transport in Stable Amorphous GST" |
| 2:05-2:30 | Elia Ambrosi (TSMC), "Arsenic-Free Threshold-Type Selectors for Low Voltage Applications" |
| 2:30-2:55 | Marina Yamaguchi (Kioxia), "New Insight into Reliability of OTS Devices: Cycling-Dependent Threshold Voltage Instability" |
| 2:55-3:20 | BREAK |
| S4: RRAM and Neuromorphic (Chairs: Attilio Belmonte, imec) | |
| 3:20-3:45 | Amir Regev (Weebit Nano), "ReRAM technology qualification process for 130nm and 28nm embedded NVM" |
| 3:45-4:10 | Mario Lanza (KAUST), "Hybrid 2D/CMOS Microchips for Memristive Technologies" |
| 4:10-4:35 | Elisa Vianello (Leti), "Resistive Memories-Based Concepts for Neuromorphic Computing" |
| 4:35-5:00 | Revannath Nikam (POSTECH), "A Thermally Programmable ECRAM for Neuromorphic Computing" |
| 5:00-6:00 | Poster Session in Allen hallway |
| 6:00-9:00 | Dinner Event at Cantor Arts Center |
Day 3 (Fri, Dec. 9)
| 7:30-8:30 AM | Breakfast with Espresso Drinks (Allen 101X) |
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| S5: Keynote, Materials, and Neuromorphics (Chair: Mario Lanza, KAUST) | |
| 8:30-9:10 | Keynote: Victor Zhirnov (SRC), "Decadal Plan for Semiconductors: New Trajectories for Memory and Storage" |
| 9:10-9:35 | Mahendra Pakala (AMAT), "Materials Engineering for Non-Volatile Memory Scaling" |
| 9:35-10:00 | Tania Roy (UCF), "MoS2 synapses with Ultra-Low Variability and their Implementation in Boolean Logic" |
| 10:00-10:25 | Murat Onen (MIT), "CMOS-Compatible Nanosecond Protonic Programmable Resistors for Analog Deep Learning" |
| 10:25-10:50 | BREAK |
| S6: MRAM (Chair: Jian-Ping Wang, Univ. Minnesota) | |
| 10:50-11:15 | Shan Wang (Stanford), "Polycrystalline SOT-MRAM for Energy-Efficient Computing" |
| 11:15-11:40 | Jean Ann Incorvia (UT Austin), "Designing Artificial Synapses for Application-Specific Neuromorphic Computing using Magnetic and 2D Materials" |
| 11:40-12:05 | Jian-Ping Wang (University of Minnesota), "Perpendicular Magnetic Tunnel Junctions with Crystalline Anisotropy and Energy-efficient Switching of Synthetic Antiferromagnet pMTJs by Voltage-controlled Exchange Coupling and Spin-Orbit-Torque" |
| 12:05-12:30 PM | Lei Wan (Western Digital), "Fabrication and Individual Addressing of STT-MRAM Bit Array with 50 nm Full Pitch" |
| 12:30-12:55 | Guohan Hu (IBM), "Recent Progress on STT-MRAM for Last-Level-Cache Applications" |
| 12:55-2:00 | Lunch and Posters |
| S7: Ferroelectric Memory 2 (Chair: Ilya Karpov, Intel) | |
| 2:00-2:25 | Uwe Schroeder (NamLab), "BEOL Ferroelectric HfO2 Capacitors for FeRAM: from Single Devices to Memory Arrays" |
| 2:25-2:50 | Deep Jariwala (Univ. Pennsylvania), "CMOS BEOL Compatible Non-Volatile Memory Devices from III-Nitride Ferroelectrics" |
| 2:50-3:15 | Chris Tassone (SLAC), "In-Situ Characterization of Formation Pathways During Flash Annealing of HfO2-ZrO2 Alloys for Embedded Ferroelectric Memories" |
| 3:15-3:40 | Xiao Gong (Natl. Univ. Singapore), "Novel Ferroelectric Non-Volatile Memory Devices for Next-Generation Computing System: From Electronics to Photonics" |
| 3:40-4:00 | Award Ceremony and Closing Remarks (Eric Pop and Attilio Belmonte) |