About the Conference

The Non-Volatile Memory Technology Symposium is an international forum that establishes a platform for the discussion of state-of-the-art and emerging memory technologies, such as FLASH, FeRAM, PCRAM, RRAM or MRAM. Talks and poster sessions span from fundamental physical understanding to large-scale applications. Within this framework not only traditional but also neuromorphic concepts are taken into account.

Committee

Conference Chairs

Eric Pop

(Stanford University, USA)

Attilio Belmonte

(imec, Belgium)

Technical Chairs

Ilya Karpov

(Intel, USA)

Eilam Yalon

(Technion, Israel)

Publications Chair

Ali Gokirmak

(Univ. Connecticut, USA)

Members

Luping Shi

(Tsinghua University, China)

Daisaburo Takashima

(Kioxia, Japan)

Rong Zhao

(Tsinghua University, China)

Matthias Wuttig

(RWTH Aachen University, Germany)

Roberto Bez

(Micron, Italy)

Kevin Zhang

(TSMC, Taiwan)

Scott Sills

(Micron, USA)

Jian-Ping Wang

(University of Minnesota, USA)

Zhitang Song

(Shanghai Institute of Microsystem and Information Technology, CAS, China)

Hongsik Jeong

(Ulsan National Institute of Science and Technology, Korea)

Thomas Mikolajick

(TU Dresden / NaMLab, Germany)

Milan Pesic

(Applied Materials, USA)

Junji Tominaga

(National Institute of Advanced Industrial Science & Technology, Japan)

Tetsuo Endoh

(Tohoku University, Japan)

Ken Takeuchi

(Chuo University, Japan)

Yiran Chen

(Duke University, USA)

Wei Lu

(University of Michigan, Ann Arbor, USA)

Luc Thomas

(Applied Materials, USA)

Hyunchul Sohn

(Yonsei University, Korea)

Daehwan Kang

(Samsung, Korea)

Hang-Ting Lue

(Macronix International Co., Ltd., Taiwan)

Abu Sebastian

(IBM, Switzerland)

Local Committee Members

Eric Pop

(Stanford University, USA)