Poster Sessions

Dec 7 evening, 5-8PM (Packard Lobby)
Dec 8 during Lunch, Breaks, and at 5:30pm (hallway outside Allen 101X)
Dec 9 during Lunch and Breaks (hallway outside Allen 101X)

 

Neural network inference using multi-level resistive random access memory
Djohan Bonnet (CEA-Leti)
Low-Power Phase-Change Memory Enabled by Superlattice Material Interfaces and Thermal Engineering
Asir Khan (Stanford)
Understanding Ultralow Resistance Drift in Superlattice Phase Change Memory
Xiangjin Wu (Stanford)
Impact of High-field Stress on Amorphized GST Line Cells and Its Implications to Charge Trapping at Room Temperature
A B M Hasan Talukder (Univ. Conn.)
Finite Element Analysis of GST/GeTe Interfacial Phase Change Memory Devices
Md Tashfiq Bin Kashem (Univ. Conn.)
Performance boost based on defect control in IGZO front gated TFTs
Subhali Subhechha (imec)
Enhanced spin-orbit torque in amorphous light element silicide
Jason Cheng-Hsiang Hsu (UC Berkeley)
Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering
Hojung Jang (POSTECH)
Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode
Kyumin Lee (POSTECH)
Effect of dead layer on ferroelectric HZO films for low thermal budget
S. Oh (POSTECH)
Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)
William Hwang (Stanford)
Spin-orbit Torques Enhanced by Thin Co Film via Dynamic Spin Pumping Coupling
Fen Xue (Stanford)
Demonstration of Sub-Nanosecond Switching in Si-doped Hafnia-based Ferroelectric FET
Mor Dahan (Technion)
Multi-state stripe domain racetrack memory devices utilizing Weyl magnetoresistance
Vivian Rogers (UT Austin)
A Single Bipolar Triangular Pulse Method for the Characterization of Ferroelectric Films
Zuopu Zhou (Natl. Univ. Singapore)
Theoretical Analysis on the Structural Optimization of MFIS Ferroelectric Tunnel Junction
Leming Jiao (Natl. Univ. Singapore)
Ultra-low current switching via voltage-controlled exchange coupling assisted with spin-orbit torque
Brandon Zink (Univ. Minnesota)
Polarity-induced memory effect in SiGeAsSe OTS selectors
Taras Ravsher (imec)
Variability in 1 Kilobit crossbar h-BN resistive switching memories
Yue Yuan (KAUST)
STEM EBIC Observation of a Switching Ferroelectric Capacitor
Ho Leung (Andy) Chan (UCLA)